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Nucleation and growth of self-induced GaN nanowires
Ce séminaire présenté par le Professeur Vladimir Dubrovskii (Laboratory of Physics of Semiconductor Heterostructures, Ioffe Institute RAS, St.-Petersburg, Russia) aura lieu à l'Institut d'Electronique Fondamentale (Orsay).
Mercredi 30 novembre à 11h
In this talk I will consider some important experimental data and new theoretical models for nucleation and growth of self-induced GaN nanowires on different substrates.
It will be shown that, while the initial nucleation steps may be driven by the elastic stress originating from the lattice mismatch with the substrate, the island to nanowire shape transformation can be well explained by the anisotropy of the surface energies coupled with the superlinear growth law.
I will also present the modeling of the GaN nanowire growth rate as a function of the substrate temperature, Ga flux and growth duration.
Triangle de la Physique
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